Piezoresponse Force Microscopy in Its Applications
Application Note 083 (pdf 11.1 Mb)
- Ferrroelectric domains imaging
- Hysteresis loops measurements
- Local ferroelectric behavior investigation
This application note gives a brief description of the Piezoresponse Force Microscopy methods and its implementation in NEXT scanning probe microscope. The capabilities of PFM studies with this device are illustrated by selected examples of imaging and spectroscopy studies on several piezoelectric and ferroelectric samples. They include lead zirconate titanate - PZT and bismuth ferrite - BFO films, ceramic samples of lead zirconate titanate doped with lanthanum - PLZT, parallel polarized lithium niobate - PPLN, crystals of triglycine sulphate - TGS.
INTRODUCTION
One of the remarkable features of Atomic Force
Microscopy (AFM) – is the capability of performing
studies of mechanical and electric properties
at the small scale. In local electric measurements
the conducting AFM probe is placed at or near a
sample surface and it serves as an electrode that is
sensing an electrostatic force, current, capacitance
or a displacement of the sample in response to the
external electric excitation. In one of such operations
a specimen as a thin film or a block sample is
placed between a contacting probe and a bottom
electrode can undergo the piezo-electric testing.
Some crystalline materials, whose structure lacks a
central symmetry, exhibit the ferroelectric behavior
by changing their dimensions in response to the
applied electric field or vice versa. This property is
employed in functional structures and devices for
optoelectronics, different actuators, data storage,
medical diagnostics, etc. The establishment of the
structure-property relationship in these materials
requires the comprehensive characterization of
their electromechanical behavior at macroscopic
and microscopic dimensions. One of AFM offsprings
- Piezoresponse Force Microscopy (PFM)
[1-4] is based on sensing of a tiny displacement of
the samples caused by electric field excitation. A
microfabricated probe with the tip dimensions in
the nanometer scale is employed for this detection
that can be performed with unique spatial
resolution.
PFM, which is applied on the scale from a hundred
of microns down to nanometers, can be used in different
environments and at various temperatures.
The method allows exploring the electromechanical
performance of ferroelectrics and piezo-electrics in terms of their domain morphology and dynamic
characteristics of hysteresis loops and switching
of polarization. Prior to PFM, the characterization
of ferroelectric samples with optical and electron
microscopy required the use of special preparation
techniques such as etching and decoration. These
efforts are not needed for PFM studies. This application
note gives a brief description of the method
and its implementation in NEXT scanning probe
microscope. The capabilities of PFM studies with
this device are illustrated by selected examples of
imaging and spectroscopy studies on several piezoelectric
and ferroelectric samples. They include
lead zirconate titanate - PZT and bismuth ferrite -
BFO films, ceramic samples of lead zirconate titanate
doped with lanthanum – PLZT, parallel polarized
lithium niobate - PPLN, crystals of triglycine
sulphate - TGS.
THEORETICAL OUTLOOK
In general case, the strain Sj developed in a piezoelectric material by the applied electric field Ei is described by the following matrix equation [5]:
where dij is the piezoelectric coefficient or modulus with the unit of m/V. The indices 1–3 indicate components along the x, y, and z axis of an orthogonal coordinate system, and indices 4–6 indicate shear components of the strain tensor. The axes of the coordinate system are often chosen along the crystallographic axes of a crystal. In the case of ceramics and thin films, the z axis is usually aligned with the direction of the polarization, which is normal to the film plane. The longitudinal piezoelectric constant, d33, can be determined by measuring the displacement (Δz) of the sample along the applied field (E3):
Δz = d33V
assuming and
where V is the applied voltage and z0 is thickness of the sample. The sample expands or contracts, if the polarization direction is respectively parallel or antiparallel to the applied field. Due to small dimensional changes (i.e. a vertical displacement of a 1-μm thick PZT film, which has the piezo modulus
d33 = 3,6E-10 m/V
is below 1 nm) their detection is facilitated by AC measurements. For this purpose,
V = VAC cos(wt)
voltage is applied to the tip and the cantilever displacements are expressed as follows
Δz = d33VAC cos(wt + Q)
When Q = 0, polarization points down, and when Q = p, polarization points up. The piezo-response will oscillate in-phase or out-off phase if the polarization is, respectively, parallel or antiparallel to the field. Because of the presence of non-zero transverse piezoelectric constants, e.g., d15, and the possible misalignment of polarization to the applied field due to a random crystal orientation, an electric field normal to the surface can also cause in-plane shear or lateral deformation. In our set-up the piezoresponses in vertical and lateral directions are analyzed with the lock-in amplifiers. Studies of the piezoresponse are often performed by recording the sample strain and polarization dependences on the applied electric field [6]. The related curves, which exhibit hysteretic loops, are schematically shown in Figures 1a‑1b. When the electric field changes from the negative polarity to the positive it changes gradually but at the point known as coercive field (Ec - indicated by point 3) the polarization increases abruptly, Figure 1a.
This indicates that a number of domains with dipoles oriented along the field have increased drastically. On further field increase the polarization again changes gradually. When the field is reversed the polarization decreases and at the negative coercive field (Ec - indicated by point 6) the polarization jumps to a negative value and continue decrease. The factors influencing these responses include stress, structural defects, and specifics of surfaces and interfaces [8]. The sample strain behavior during the same cycle of the electric field excitation is described in Figure 1b. The slopes of the lines, which are pointed with the arrows, represent the piezoelectric modulus d33. In actual samples the hysteretic curves deviate from the idealistic ones due to a number of reasons related to the sample polycrystalline nature, various structural imperfections, specifics of the experimental measurements.
EXPERIMENTAL SET-UP AND PFM MEASUREMENTS
The PFM setup realized in NEXT scanning probe microscope is shown in Figure 2. A conductive probe is brought into a contact with a sample and its load is adjusted by varying the deflection set-point.The piezoelectric activity is stimulated with an AC voltage applied between the tip and the sample that causes the periodical expansion or contraction of the sample.
Figure 2. Sketch of Piezoresponse Force Microscopy set-up in scanning probe microscope NEXT.
The changes of the sample dimensions are magnified
by the cantilever deflection or bending and the
latter are detected through the AC signals of different
segments of the quadrant photodetector. The
amplitude and phase of the vertical tip displacement
are recorded by one of the lock-in amplifiers,
and they are presented as VPFM amplitude and
phase. Another amplifier is used for a detection of
the amplitude and phase of the lateral response of
the probe.
They are known as LPFM amplitude and phase.
Instead of amplitude and phase one can measure
amplitude cosine and sine components. Studies
of local electromechanical properties can be performed
at individual surface locations by recording
the amplitude and phase signals when bias voltage
is changing between the chosen limits of different
polarities. By analogy with macroscopic studies of
hysteretic loops of ferroelectrics, the amplitude
versus bias voltage curve defines the local strain
response and phase versus bias voltage dependence
reflects the sample polarization behavior.
The dependence of Acoswt versus bias voltage is
known as the piezoresponse curve, which is often
used in PFM studies. By analyzing local hysteresis
loops, one learns about the piezoelectric properties
of small piezo- and ferroelectric domains such
as coercive voltages, nucleation voltages, forward
and reverse saturation and permanent responses,
as well as the effective work of switching, which
is defined by the area embraced by the hysteresis
loop [7]. The factors influencing these responses
include stress, structural defects, and specifics of
surfaces and interfaces [8]. Here it is worth mentioning
several experimental details of practical
PFM. They include a sample preparation, a choice
of the probe and operational parameters such as
a deflection set-point, amplitude and frequency of
the electric excitation. Flat samples such as films
are most suitable for PFM studies whereas the ceramic
specimens need to be polished prior to imaging.
A particular care should be taken for a removal of traces of abrasive from the sample surface and for preventing
its external contamination. Typically, the conducting
probes with stiffness in relatively large range: from 0.1 N/m
to 40 N/m range can be applied for the piezo-resistive studies.
The resonant frequencies of these probes are in the 10-
400 kHz range and upon contact they are shifted to higher
frequencies.
Another important parameter for measurements of small
cantilever deflections and amplitudes is the optical sensitivity,
which is the reversal of the probe length. Therefore, the
shorter probes, which are stiffer than longer ones, do provide
a better signal yet their applicability is directly related to
mechanical strength of the sample. The samples examined in
our studies were stiff enough that we can use the conducting
probes with spring constant of ~ 40 N/m. This helps minimizing
the undesirable cantilever-sample electrostatic effects,
which can be substantial when soft probes are applied [7, 9].
In NEXT scanning probe microscope, PFM studies can be
performed using the voltage in the (-50 V) – (+50 V) range depending on the sample nature and
thickness. The use of lower voltages has
an advantage of reducing the electrostatic
force interactions, which might
“contaminate” the piezo-response
measurements. An electric excitation
with low voltages (below 1 V) is particularly
important for spectroscopic
measurements.
The electric AC field, which stimulates
the sample piezo-response, in the tipsample-
bottom electrode configuration
can be generated by applying the bias
either to the tip or the bottom electrode.
An unwanted cross-talk between
the driving signal and the piezo-response
measurements can be avoided
by supplying a bias voltage to the bottom
electrode with a separate shielded
wire. A choice of the frequency of the
electric excitation is quite peculiar. One
can either use the frequency well below
or at the probe contact resonance. In
case of sub-resonant excitation the amplitude
of the probe response directly
follows the sample displacement. At the
contact resonance the amplitude of the
probe response (A) equals to d33 x Vac x
Q, where Q is the quality factor of the
contact resonance. The operation at the
frequency of the contact resonance is
more sensitive yet at these conditions
the quantitative estimates of the piezoresponse
are rather complicated due to
signal amplification.
The mechanical tip-force control during
scanning in the contact mode is
performed by varying the deflection
set-point. The chosen set-point should
insure a stable tip-sample contact and
prevents the sample damage. In some
cases the scanning probe might swipe
a surface contamination and this helps
for establishing the direct contact with
the examining sample. The above considerations
are illustrated by imaging
of a ceramic sample of PLZT in Figures
3a-d. The imaging of PLZT surface in the
oscillatory amplitude modulation mode revealed a presence of surface adsorbate,
which might originate from debris
of polishing procedure or contamination
during storage. This adsorbate layer,
which is seen as bright patches in the
height image, was gradually removed
by a scanning probe during when PFM
measurements in the contact mode
were initiated, Figures 3a-3b.
The repetitive scanning of this area
helps cleaning the sample surface,
which exhibits a number of polishing
lines, Figure 3c. Remarkably, the VPFM
phase contrast, which reveals the
domain morphology of the sample, is
much cleaner on the areas free from
the adsorbate, Figures 3c-d. Actually,
in studies with the probe, which is 240 micron in length and has spring constant
around 2 N/m, the piezo-response in the
phase images was most noticeable with
the operation at the contact resonance
near 364 kHz. More peculiarities of the
PFM measurements will be mentioned
in the analysis of the data obtained on
different samples.
SELECTED EXAMPLES
Lead Zirconate Titanate - PZT film
The PFM studies of the piezo-electrics
and ferroelectrics include domain imaging,
local spectroscopic studies and
polarization procedures. PZT is one of
the most known piezo-electric material
with high d33 (100-500 pm/V), high remnant
polarization and high dielectric
constant.
This material is used for different actuators
and PZT films serve as capacitors
and data storage elements. Studies
of PZT with scanning force microscopy
were initiated almost 20 years ago
[10]. We have performed PFM imaging
of a PZT film, which is 4mm thick, using
the conducting probes with spring
constants of 2 N/m and 40 N/m. The
earlier study of this film showed that is
has a columnar structure with random orientation of the grains with sub-micron lateral dimensions
[8]. The height and PFM images of this sample obtained with
the softer probe, Figures 4a-4c, reveal it grainy topography
and the unique contrast of the VPFM phase image with the
domains of opposite contrast. The cross-section taken along
the several domains demonstrates that they differ by 180 degrees,
Figure 4d. The contrast of the PFM amplitude image
is quite dissimilar to the phase image and because it has a
strong contribution of the sample topography. This effect is not unusual for the operation at the
contact resonance in which topography
variations are amplified as well as the
sample piezo-response. A comparison
of the topography image with the amplitude
and phase maps for the PFM operation
at the sub-resonant frequency
with the stiff probe shows that the latter
reflect the intrinsic domain structure
of the sample that is not related
to the surface topography, Figures 4e-f.
The cross-section of a part of the phase
image in Figure 4h reveals that the contrast
reflects the reverse polarization
of the domains. There are a large number
of small domains with the diameter
in the 50-100 nm range and some of
them having opposite polarization.
In the VPFM amplitude image some of the domains are surrounded by darker borders that can be assigned to the domain walls. Our observations of the domain morphology are consistent with those found in the studies of other PZT films [11]. The results of PFM spectroscopy measurements on the PZT films are illustrated by one set of the hysteresis curves in Figures 5a-c. The amplitude versus bias curve has a characteristic “butterfly” shape that is actually smoothened idealistic strain versus bias curve in Figure 1b. The polycrystalline nature of the sample is reflected in the experimental curves. The abrupt transitions in the phase curve take place at bias voltage around ±7 V. Depending on a location this coercive voltage varies and can reach ±15 V values.
This information is instructive when one wants to polarize the sample. One of the areas of PZT film was polarized by scanning the probe with DC bias voltage of 20 V, Figures 6a-b. The effect of polarization, its magnitude, and possible dissipation can be monitored in the PFM mode. The PFM imaging of a slightly larger area revealed that the polarized region exhibits a much stronger response compared to its non-polarized surrounding. This effect can be reversed by scanning the polarized area with the probe having negative bias voltage of -20 V. Such switching of the polarization was achieved in the top part of the polarized area as seen from Figures 6c-d.
Only the borders of the previously polarized area and the central
position where the probe is rested between the images
show the polarization traces. The height images do not exhibit
any variations caused by the polarization procedure.
Lead lanthanum zirconate titanate - PLZT ceramics
An application of PZT material for ferroelectric random access
memories, which is justified by material large polarization
and relatively reliable integration process, requires the improvement of the PZT fatigue and
retention performance. The retention
behavior is related to oxygen and Pb
vacancies, and it can be improved by
doping the material with lanthanum,
niobium or other additives. A small
addition (up to 10%) of donor dopant,
like La3+ ions, enhance domain wall
mobility leading to improved remnant
polarization and also to lower dielectric
constant and Curie point [12]. Characterization of PLZT material can
be improved by PFM studies. As it
was discussed above, a removal of a
top contamination layer by a scanning
probe opens a flat topography of the
PLZT ceramic sample with a composition
(Pb0.905La0.095 (Zr0.65Ti0.35)0.9575O3). The
large-scale images (not shown here)
show that the sample is composed
of the grains of irregular hexagonal
shape, which are typical for dense
packing in hot-pressed ceramics. The
largest grains have up to 10 microns
in dimensions and a part of one of the
grains is presented in Figures 7a-c. The
height image of the sample reveals
multiple polishing scratches (Figure 7a)
whereas the domain morphology is clear
distinguished in the VPFM amplitude
and phase images (Figures 7b-c). Light
and dark areas correspond to elongated
wavy domains with opposite signs
of the vertical polarization. This is
evidenced by the 180-degrees steps
seen in the phase profile in Figure 7d.
The cross-section profile, which is made
in the VPFM amplitude image, shows
the depressed traces that represent
the domain walls. These features are
around 50 nm in width and they have
a curved shape that is known as the
domain roughness originated from the
pinning of the domain walls by randomly distributed immobile defects. Domain
walls should be flat in the absence of
irregularities pinning the wall motion.
Measurements of the domain walls dynamics and wall roughness of PLZT are described in more details in [13]. The PFM spectroscopy data, which were obtained for different amplitudes of the electric field excitation, are presented in Figures 8a-f. The shape of the amplitude, phase and piezo-response curves is similar to one obtained for PZT sample. The coercive voltages are below 10V. With the increase of the excitation voltage the signal-to-noise ratio of the curves improves yet it leads to a noticeable deviation of the phase of the piezo-response curve and increase of the effective work of switching.
An examination of the locations, which were used for harvesting spectroscopy data, showed the circular traces of local polarization, Figure 9a-b. Both effects need a further investigation combining the experimental results and finite element modeling of tip-sample electrostatic and electromechanical interactions.
Parallel Polarized Lithium Niobate, PPLN
Lithium niobate (LiNbO3) is the manmade
ferroelectric material that is
widely applied in acoustics transducers,
delay lines, filters, optical amplitude
and phase modulators, second
harmonic generators and other technological
products. The material is usually
made as the macroscopic single crystal.
At room temperature lithium niobate
crystals exhibits a hexagonal symmetry
with polarization along the c-axis,
which arises from the displacement of
cations (Li+ and Nb5+) with respect to
oxygen planes along the c-axis. Thus,
only two domain orientations are possible
in lithium niobate (antiparallel
180º domains). For optical applications
the crystals are often polished with the
c-axis is perpendicular to the surface and polarized above the Curie point
(1210°C) in different patterns using a
lithographic mask, [14].
A similar specimen with parallel polarized
domains is distributed by NT‑MDT SI as the standard for PFM training and applications.
The height and PFM images
of PPLN standard are shown in Figures
10a-c. A polished surface of this sample
is very smooth and has no traces of the
domain morphology, Figure 10a. The
VPFM amplitude image reveals the domain
pattern with two bright 5-μm wide
“fingers”, Figure 10b. The image contrast
reflects the minimal amplitude
variations in the fingers and the matrix
but well distinguished domain walls. The
cross-section amplitude trace in Figure
10d indicates that the depressions representing
the domain walls have a sub-
100 nm width. The pronounced phase
contrast of ~180 degrees in Figure 10c
points on the opposite polarization of the fingers and their surroundings.
Due to possible imperfections of the lithographic mask, in some locations of the standard sample one can find domains with slightly rough walls as seen in Figures 11a‑d. This region with a smooth topography includes the differently polarized domains with high contrast amplitude and phase signals. The cross-section in the 1-μm amplitude image shows that the width of the wall at the half depth is ~ 50 nm. This value is larger than the domain wall thickness in the 5-15 nm range determined in single crystals of (Ba, Pb)TiO3 with electron microscopy [15]. The analysis of the broadening of the wall thickness includes the contributions of the probe dimensions and complex electrostatic interactions and depolarization field at the sample surface [16]. The questions regarding the spatial resolution of PFM measurements have been already addressed [17] but still is a subject of the debate.
Crystals of Triglycine Sulphate - TGS
Triglycine sulfate (TGS) is one of the
most widely studied ferroelectric materials,
which is broadly used together
with its deuterated analog for infrared
detectors. TGS is one of the few ferroelectrics
known to exhibit a second-order
phase transition and hence, to offer
possibilities for the observation of
this critical phenomenon very close to
the transition temperature. Below the
Curie temperature, TGS crystal exhibits
antiparallel 180-degree domains, which
are generally parallel to the b axis.
The domain shape of TGS is known to
be of a lenticular shape, elongated in
the direction parallel to the a axis. TGS
is suitable for the study of static ferroelectric
domain structures and domain
dynamics by scanning probe microscope,
because the direction of the
spontaneous polarization is perpendicular
to the cleaved surface (a–c plane).
One of the first local studies of TGS was
performed with the instrumental set-up similar to PFM but called as a dynamic contact operation of
electrostatic force microscopy [17].
This work and the latter publication [18] presented a variety
of TGS domain morphologies examined at different temperatures.
These studies were performed with the probe scanned
the sample in the contact mode with electric bias of 5 V at 40
kHz. The observation of the positively and negatively polarized
domains, whose morphology does not affected by topographic
features, was explained by detecting the electrostatic
force variations caused by the surface charge density. This explanation
is the alternative to the piezo-response effect. We
have examined a single crystal of TGS of few millimeters in
thickness. The crystal was cleaved to reveal a fresh surface
(a-c plane). The height image of the surface reveals multiple
patches with a depression slightly above 1 nm in depth, Figure 12a.
These features as well as small islands on the similar height
can be assigned to the crystallographic steps in the b axis
which has a crystallographic period of 1.27 nm. The VPFM phase image (Figure 12b) is featureless,
most likely, because the crystal consists
of equal number of positive and negative
polarization domains with no piezoelectric
effect.
The situation changed after the crystal
was heated to temperature above the
material Curie point (49°C) and then
cooled back to room temperature. As
the height image of the annealed sample
did not show changes (Figure 12c),
the 180 degrees steps differentiate the
domains of the opposite polarity appeared
in the VPFM phase image, Figure
12d. The extended bright strips represent
the parts of extended finger-like
domains extended along the crystallographic
a axis. The height and VPFM
phase images of the larger area with
15-nm and 10-nm steps (Figures 12e-f)
confirm that the domain morphology
is practically independent from the
surface topography. The slight traces of
the topography cross-talk to the phase
image are noticed only at the surface
steps.
Bismuth Ferrite, BiFeO3 - BFO
Bismuth ferrite (BFO) is an inorganic
compound with perovskite structure
and one of the most promising magnetoelectric
materials. BFO is multiferroic
and it exhibits ferroelectricity, ferroelasticity
and antiferromagnetism at
room temperature. The control of magnetic
ordering via applied electric fields
has been demonstrated for single crystals
and epitaxial thin films. Therefore,
for future device application the mechanisms
of magnetoelecric coupling at
the nanoscale are studied intensively.
Ferroelectric structure of BFO is rather
complex. At the room-temperature the
material is in the rhombohedral crystallographic
phase and ferroelectric polarization
occurs along the pseudocubic
[111] direction. This leads to eight
equivalent polarization variants along
the body diagonals of the pseudocubic
unit cell and to domains separated by 71°, 109°, and 180° walls. The domain morphology and composition
strongly depends on film growth parameters, and
substrate and electrode configurations. Typically BFO films
have [001] crystallographic orientation, therefore, the ferroelectric
polarization should manifest itself in VPFM and LPFM
signals. Therefore, PFM can be applied for comprehensive
characterization of anisotropic polarization and nanoscale
switching mechanisms. The height and PFM images of the
epitaxial BFO film, which were recorded at the different orientation
of the sample striped morphology, are presented in
Figures 13a-j. The probe was aligned along the Y-coordinate
of the images. The domains with the opposite polarization
are well distinguished in the VPFM and LPFM phase images,
when they are recorded with the strips aligned in the ~ 45
degrees with respect to the probe, Figures 13a-c. When the
strips were aligned perpendicular and parallel to the probe
axis then the domain contrast was only enhanced respectively
in VPFM phase image (Figures 13d-f) and in LPFM phase image
(Figures 13g-j).
This effect can be explained by a strong in-plane piezoresponse of this sample, which is directed perpendicular to the strips. This response causes a buckling of the probe (strong normal force signal) when the probe is oriented perpendicular to the strips. When the probe is along the strips, the same effect causes a torque of the probe (strong lateral force signal). The cross-section profile of the trace in Figure 13f indicates that the observed domains differ by 180 degrees phase changes. In addition to the thin film we have examined a monodomain BFO material and the high-resolution images of this sample are presented in Figures 14a-c. The ferroelectric domains and their walls are well distinguished in the VPFM amplitude and phase images. The PFM spectroscopy data, which were obtained at one of the monodomain locations, Figures 14b,d‑f. The coercive voltages are around 5V.
In studies of the sample polarization, a 2-micron region was polarized by the positively biased probe. This procedure was followed by its switching of the polarization at the smaller inside area. The height and PFM images of this location obtained after these exercises (Figures 15a-c) demonstrate that the polarization and its switching back were accomplished successfully without any modification of the sample topography. The polarization procedures, however, were accompanied by a deposition of positive and negative surface charges. This is evident from single-pass KPFM image, which was obtained at the polarized location, Figure 15d. The surface potential variations at this location were in the range of several hundreds of millivolts.
PFM CHALLENGES AND OPPORTUNITIES
The goal of the present Application Note
is to demonstrate that the NEXT scanning
probe microscope has the broad
capabilities for collecting reliable highquality
PFM imaging and spectroscopy data. This goal has been achieved in studies of five different
materials. The presented results serve as the basis for more
advanced research can be outlined in the following.
Despite the wide application of PFM in the research of piezoelectric
and ferroelectric materials, the imaging mechanism, particular the quantitative measurements and their
interpretation meet a number of challenges. In the
detailed analysis the additive contributions of the
long-range electrostatic forces between the sample
and the cantilever and the electromechanical
tip-sample interactions to the total PFM response
should be considered [3]. The sample-cantilever
electrostatic forces lead to a constant background
to the measured piezoresponse, and it can be minimized
by using tall and high aspect-ratio tips. This suggestion needs to be verified with high-aspect
probes having extra-long tips.
The use of the probe with T-shaped cantilever that
carrying the tip whose position is offset from the
cantilever axis enhances the torsional response of
the probe to the in-plane piezoresponse. Therefore,
such probe can be useful for studies the sample
with strongly anisotropic polarization such as BFO
films. The electroelastic contribution to the piezoresponse
depends strongly on the contact interface between the tip and the surface,
the shape, size, and material of
the tip itself. Therefore, the use of
metal-coated, stiff cantilever with
large force (strong indentation) is
most desirable for PFM imaging.
This is also emphasized by the fact
that these probes are short that
provides high optical sensitivity for
the detection of the small sample
displacements. The only limitation
of the stiff probes is their application
to soft samples in the contact
mode operation. Another concern
for quantitative PFM measurement
is the calibration of the instrument
for quantitative studies of the piezoelectric
coefficient. However,
such measurements are complicated
by the presence of a frequency
dependent instrument background
and other reasons. The needed efforts
for accurate calibration and
measurement of quantitative piezoelectric
constants were proposed
in [22].
In the future PFM applications
it is worth expending the measurements to the broader frequency range to
fully utilize the wide bandwidth (up to 8 MHz) of
NEXT scanning probe microscope. In such work,
higher resonances of the probes in the several
MHz range can be applied for the detection of piezoresponse.
The combination of PFM studies with other AFM-based electric modes such as singleand
double-pass KPFM (Figure 15d) and dielectric
response can be very informative in characterization
of ferroelectrics and might help to figure out
the controversy described in [18].
ACKNOWLEDGEMENTS
Prof. A. Kholkin and Dr. I. Bdikin (both Aveiro University, Portugal), Dr. Jake Jokisaari (Prof. X. Pan Research Group, University of Michigan, Ann Arbor, USA) and Dr. R. Gainutdinov (Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia) are acknowledged for kindly provided samples of PZT, PLZT, TGS and BFO, which were used in the studies described in this Application Note.
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