Self-organization of silicon nano-islands (0.3-0.6 nm in height) on stepped Si(111) surface – as the method of surface nanostructures formation. It has been revealed the ordering of two-dimensional silicon islands (one and two atomic layer in height) on special made interdomain boundaries of Si(111)-7x7 superstructure.
Image and sample courtesy of Rodyakina, Institute of Semiconductor Physics, Moscow, Russia.
Self-organization of silicon nano-islands (0.3-0.6 nm in height) on stepped Si(111) surface – as the method of surface nanostructures formation. It has been revealed the ordering of two-dimensional silicon islands (one and two atomic layer in height) on special made interdomain boundaries of Si(111)-7x7 superstructure.
Image and sample courtesy of Rodyakina, Institute of Semiconductor Physics, Moscow, Russia.
